PART |
Description |
Maker |
K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
K7N403601M K7N401801M |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
SAMSUNG[Samsung semiconductor]
|
K7N401801M K7N403601M |
128Kx36 & 256Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7A401800A |
256Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119 128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
IDT71V2559S75BG IDT71V2559S75BG8 IDT71V2559S75BQ I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 2.5V I/O
|
IDT
|
CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
|
Cypress Semiconductor Corp.
|
CY7C1353 7C1353 |
256Kx18 Flow-Through SRAM with NoBL Architecture(B>NoBL结构56Kx18流通式 静态RAM) From old datasheet system
|
Cypress Semiconductor Corp.
|
CY7C1353-40AC CY7C1353-66AC |
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 14 ns, PQFP100 256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|